Pryroda Engineering

Pryroda Engineering

Designers and manufacturers of industrial equipment


Pryroda Engineering is a designer and manufacturer of sophisticated equipment for electronic industry.
Our team’s experiences are interlaced with the creation and development of the electronic equipment manufacturing in Ukraine.
Our essential offering today is a turn-key solution for equipment for a sapphire manufacturing plant.
The core of our team is formed by experts in equipment manufacturing. Some of whom participated in the development of sapphire furnaces from their inception in the former Soviet Union.
We modernized sapphire growing and machining equipment during 2000-s and worked at Atlas, Russia, to customize equipment for their technology.
In 2008, we formed a partnership with a very strong team of technology experts who forged their experience at Atlas, Russia, and contributes with the latest achievements in practical technology.
Range of technology support: deployment of turn-key sapphire manufacturing based on Kyropoulos method

  • Infrastructure and utilities planning support and consulting
  • Growth and machining shop design and consulting
  • Growing technology and know-how transfer
Sapphire single crystal obtained in our sapphire grower.
Sapphire single crystal obtained in our sapphire grower.
  • Equipment selection for cutting, coring, grinding and lapping

– Tool design and manufacturing for processing and optical orientation measuring
– Diamond tool selection
– Development of complex sapphire manufacturing techniques
– Personnel training

  • Long term technology support and development
  • Deployment, monitoring, and updates to the control system and software

– Customized control system and software design
– Technical assistance and upgrades
– Remote control and support through the Internet

  • Design, manufacturing, and supply of heat modules (or heat zones).
  • Analysis and consulting for raw materials and consumables
  • Marketing and product mix consulting

Omega-M300, a crystal growing furnace: sapphire ingots of 300mm (11.8″) in diameter and weighing up to 85kg by Kyropoulos method

Omega-M300

Omega-M300, Kyropoulos sapphire growing furnace
Omega-M300, a Kyropoulos sapphire growing furnace

The sapphire grower is intended for cultivation of sapphire monocrystals weighing up to 85kg, with a diameter of up to 300mm (11.8″) and a length of up to 300mm, by the method GOI (Kyropoulos).

Technical Characteristics

Weight of the load of raw material in the melting pot, kg: 85.
Temperature of molten material, Celsius: 2100
Hypobaric pressure in the chamber, Pa: 6×10?-5
Run of the rod, mm: 150
Working speed of the rod, mm/hour: 0,1-1,2
Power consumption, kilowatt: 45 – 85, peak- kilowatt: 120
Cooling water debit, cubic meter/hour: 3,5
Inert gas debit, cubic meter/cycle: 0,3
Weight, kg 2205

Additional Parameters

Method of heating: resistive.
Working environment: vacuum, Pa: 6?10?-5
The speed of the rod (the speed varies in 0,1mm/hour increments), m/s(mm/hour):
– the lowest speed: 0,03?10?-6( 0.1)
– the highest speed: 3,6?10?-6(1.2 )
Speed of the accelerated movement of the rod, m/s(mm/hour): 6,9?10?-6(25).

The power unit of Omega-M300
The power unit of Omega-M300 delivers from 60 to 100kW of electric power during the growing process.
Accuracy of maintenance of the speed of the rod, %: ±2
Rotation frequency of the rod, 1/s (rotations/min):
– the lowest speed: 0,05(3);
– the highest speed: 0,133(8).
Accuracy of stabilization of voltage on the heater, %:
– in the range from 2,5V to 5V, %: ±2;
– in the range from 5V to 7V, %: ±1;
– in the range from 7V to 10V: ±0,1.

Installation requirements

Omega-M300. A view on the cover and column.
Use of a load cell in combination with controlling software improves outputs while reducing the role of the operator.

A shop with the following parameters of microclimate: – temperature 20±5°?; – relative humidity below 90%; Also: – a premise of 9m2; – a sewer discharge at the floor level or lower with a conditional pass of at least 70mm; – a contour of grounding, with resistance value between the grounding bolt and any of accessible parts of the device should be 0.1ohm or lower.

Operational supplies

Demineralized water under a pressure of 4?10?5±0.5?10?5Pa(Pascal) (4±0,5 kg/cm2).
Water temperature must not be higher than 20±5°?; debit of water should be 3.5 m3/hour;

A view on elements of vacuum and cooling systems of the Kyropoulos furnace Omega-M300.
A closed circuit cooling system reduces water consumption.

Nitrogen gas, purified to the level required by GOST 9293-74 and supplied under 0,5?10E5Pa of pressure (0,5kg/cm2). The power supply of the device is realized by three-phase four-wire (with a zero wire) networks of alternating electrical current with a voltage of 380V(Volt), a frequency of 50(60)Hz. Quality standards of electrical current should meet the requirements of GOST 1.3109-87.

Omega-M200, a crystal growing furnace: sapphire single crystals of up to 200mm in diameter by Kyropoulos method

The rod with the load cell
The rod with the load cell

Omega-M200

The device is intended for cultivation of sapphire monocrystals weighing up to 38kg, with a diameter of up to 200mm and a length of up to 300mm, by the method GOI (Kyropoulos).

Technical Characteristics

Weight of the load of raw material in the melting pot, kg: 38.
Temperature of molten material, Celsius: 2100.
Hypobaric pressure in the chamber, Pa: 6x10E-5
Run of the rod, mm: 150.
Working speed of the rod, mm/hour: 0,1-1,2
Power consumption, kilowatt: 60, peak- kilowatt: 80.
Cooling water debit, cubic meter/hour: 3,5.
Inert gas debit, cubic meter/cycle: 0,2.
Weight, kg 2108.

The column with the rod lifting mechanism
The column with the rod lifting mechanism

Additional Parameters
Method of heating: resistive.
Working environment: vacuum, Pa: 6?10E-5
The speed of the rod (the speed varies in 0,1mm/hour increments), m/s(mm/hour):
– the lowest speed: 0,03?10E-6( 0.1)
– the highest speed: 3,6?10E-6(1.2 )
Speed of the accelerated movement of the rod, m/s(mm/hour): 6,9?10E-6(25)
Accuracy of maintenance of the speed of the rod, %: ±2;
Rotation frequency of the rod , 1/s (rotations/min):
– the lowest speed: 0,05(3);
– the highest speed: 0,133(8).

A closer look at the load cell
A closer look at the load cell

Accuracy of stabilization of voltage on the heater, %:
– in the range from 2,5V to 5V: ±2;
– in the range from 5V to 7V: ±1%;
– in the range from 7V to 10V: ±0,1%.

Installation requirements

A shop with the following parameters of microclimate:
– temperature 20±5°?;
– relative humidity below 90%;
Also:
– a premise of 9m2;
– a sewer discharge at the floor level or lower with a conditional pass of at least 70mm;
– a contour of grounding, with resistance value between the grounding bolt and any of accessible parts of the device should be 0.1ohm or lower.

Inside the power supply unit of the sapphire crystal grower
Inside the power supply unit of the sapphire crystal grower

Operational supplies:

Demineralized water under a pressure of 4?10E5±0.5?10E5Pa(Pascal) (4±0,5 kg/cm2). Water temperature must not be higher than 20±5°?; debit of water should be 3.5 m3/hour;
Nitrogen gas, purified to the level required by GOST 9293-74 and supplied under 0,5?105Pa of pressure (0,5kg/cm2).
The power supply of the device is realized by three-phase four-wire (with a zero wire) networks of alternating electrical current with a voltage of 380V(Volt), a frequency of 50(60)Hz.
Quality standards of electrical current should meet the requirements of GOST 1.3109-87.

Wafer slicing saws

Pryroda manufactures equipment for wafer slicing of sapphire (Al2O3) and other hard and super-hard mono and poly crystalline materials, notably silicium (Si), corundum and others.

Pryroda’s wafer slicing saw Titan-P uses a diamond coated wire technology.

A combination of electric drive with high-torque electric motors and SIEMENS controlling units allows reaching of slicing speeds of 15 square mm per minute for super-hard materials.

149 wafers of 50.8mm in 2 – 2.5hours

An ingot of 50.8mm in diameter could be sliced in 2 – 2.5 hours producing up to 149 wafers simultaneously.

For watch industry: up to 850 wafers of 50.8mm in 2 – 2.5hours

An additional appliance extends productivity to 850 simultaneously obtained wafers for watch crystals in just 2 – 2.5 hours. Indeed, in wafer slicing intended for use in the watch industry, the exact crystallographic orientation is not required. This simplifies the design and allows higher productivity.

Distinctive quality

The distinctive quality of Titan-P wafer slicing saw designed by Pryroda is a high reliability of the mechanisms despite a high wind speed of the diamond coated wire. This allows avoiding wire breaks during slicing process.

In Pryroda’s design, the cutting force transmitted to the wire is not accumulated on the extremities.

For such design, the only limitation on the number of wafers is the mechanical strength of the sliced ingot. Indeed, in slicing with rotation, the central kernel receives a force load proportional to the length of the ingot.

Titan-P: a wafer slicing wire saw with a diamond coated wire

Highlights

Titan-P: the wafer slicing saw and its controlling unit.
Titan-P: the wafer slicing saw and its controlling unit. Equipped with SIEMENS modules and components.
  • Good productivity and reliability;
  • Successfully operated by renowned sapphire manufacturers;
  • Comes along with an extensive technological support for implementation;
  • Covered for after-sale support and parts;

Titan-P: A view on the working area with the ingot rotating mechanism and the drums with tight wire.
Titan-P: A view on the working area with the ingot rotating mechanism and the drums with tight wire.

Description

The device is intended for slicing of poly crystal and single crystal ingots, notably of sapphire monocrystals, as well as for slicing of other hard or superhard materials. Slicing is done by a diamond coated wire.

Technical Characteristics (Main configuration)

Diameter of sliced ingots, mm: up to 300mm

Length of sliced ingots, mm: up to 150

Weight of sliced ingots, maximum, kg: 11.5

Wire winding speed, m/s: 0.3 – 15

Transversal approach speed,

mm/min.: 0.07 – 1

Number of wafers from one cycle of cutting (thickness of 0.7mm), pieces: 149

Cutting of a large diameter sapphire ingot (about 11 inches) into wafers.
Cutting of a large diameter sapphire ingot (about 11 inches) into wafers.

Duration of one cycle with a sapphire ingot of 50.8mm in diameter and 150mm in length (resulting in 149 wafers), hours: 2 – 2.5

WARP, micro meters: 10 – 30

Ra, micro meters: 0.7 – 0.8

Weight of the device, kg: 1310

Watch industry configuration:

One cycle of slicing allows to obtain up to 850 wafers* of 50.8mm in diameter and 0.7mm thick in 2 – 2.5 hours.

*for use in the watch making industry

Titan-P: a view on the cooling-lubricating fluid unit.
Titan-P: a view on the cooling-lubricating fluid unit.

Installation requirements

A shop with the following parameters:

– temperature 18 – 30°?;

– relative humidity below 70%;

– there is now need for a special bedding;

Also:

– a premise of 9m2;

– a contour of grounding, with resistance value between the grounding bolt and any of accessible parts of the device should be 0.1ohm or lower.

Operational supplies:

Titan-P: slicing of a 200mm (7.8 inches) sapphire ingot into wafers.
Slicing of a 200mm (7.8'') sapphire ingot into wafers.

Compressed air, purified to the level of at least 12, in accordance with GOST17433 and supplied under 6.3?10E5Pa of pressure (6.42kg/cm2).

The power supply of the device is realized by three-phase four-wire (with a zero wire) networks of alternating electrical current with a voltage of 380V(Volt), a frequency of 50(60)Hz.

Quality standards of electrical current should meet the requirements of GOST 1.3109-87.

Spectrum-P, sapphire crystal growing furnace: ribbon-shaped 1200mm long sapphire single crystals by EFG/Stepanov method

Spectrum-P
Ribbon-shaped sapphire single crystals of up to 1200mm by EFG/Stepanov method.

The device is intended for cultivation of sapphire monocrystals by the method of Stepanov/EFG (Edge-Defined Film-Fed Growth (EFG).

Highlights

Possibility to add furnace-charge during the process.
Sensors for precision control of the growth regimes.

Technical Characteristics
Dimensions of obtained ingots:

width, max, mm: 85,

length, max, mm: 1200.

Temperature of molten material, Celsius: 2150.

Number of working rods: 2.

Run of the rod, mm: 1200.

Working speed of the rod:

growth regime, mm/min: 0.2-2,

adjustment regime, mm/min: up to 4,

accelerated regime, mm/min: 685.

Speed of the rod variation increment, mm/min: 0.05

Power consumption, kilowatt: 65.

Dimensions of crystallizer:

length, mm: 2396,

width, mm: 1150,

height, mm: 4500.

Weight, kg 4767.

The power supply of the device is realized by three-phase four-wire (with a zero wire) networks of alternating electrical current with a voltage of 380V(Volt), a frequency of 50(60)Hz.

A contour of grounding, with resistance value between the grounding bolt and any of accessible parts of the device should be 0.1ohm or lower.

Quality standards of electrical current should meet the requirements of GOST 1.3109-87.