Designers and manufacturers of industrial equipment
Pryroda Engineering is a designer and manufacturer of sophisticated equipment for electronic industry.
Our team’s experiences are interlaced with the creation and development of the electronic equipment manufacturing in Ukraine.
Our essential offering today is a turn-key solution for equipment and technology for a sapphire manufacturing plant.
The core of our team is formed by experts in equipment manufacturing. Some of whom participated in development of sapphire furnaces from their inception in the former Soviet Union.
We modernized sapphire growing and machining equipment during 2000-s and worked at Atlas, Russia, to customize equipment for their technology.
In 2008, we formed a partnership with a very strong team of technology experts who forged their experience at Atlas, Russia, and contributes with the latest achievements in practical technology.
Our current offer is a unique opportunity for newcomer sapphire manufacturers.
Indeed, with our equipment + technology offer, we are capable to drive customer’s projects to industrial production in 7-8 months.
Range of technology support: deployment of turn-key sapphire manufacturing based on Kyropoulos method
- Tool design and manufacturing for processing and optical orientation measuring
- Diamond tool selection
- Development of complex sapphire manufacturing techniques
- Personnel training
- Customized control system and software design
- Technical assistance and upgrades
- Remote control and support through Internet
Omega-M300, a crystal growing furnace: sapphire ingots of 300mm (11.8″) in diameter and weighing up to 85kg by Kyropoulos method
Omega-M300
The sapphire grower is intended for cultivation of sapphire monocrystals weighing up to 85kg, with a diameter of up to 300mm (11.8″) and a length of up to 300mm, by the method GOI (Kyropoulos).
Technical Characteristics
Weight of the load of raw material in the melting pot, kg: 85.
Temperature of molten material, Celsius: 2100
Hypobaric pressure in the chamber, Pa: 6×10Е-5
Run of the rod, mm: 150
Working speed of the rod, mm/hour: 0,1-1,2
Power consumption, kilowatt: 45 – 85, peak- kilowatt: 120
Cooling water debit, cubic meter/hour: 3,5
Inert gas debit, cubic meter/cycle: 0,3
Weight, kg 2205
Additional Parameters
Method of heating: resistive.
Working environment: vacuum, Pa: 6х10Е-5
The speed of the rod (the speed varies in 0,1mm/hour increments), m/s(mm/hour):
- the lowest speed: 0,03х10Е-6( 0.1)
- the highest speed: 3,6х10Е-6(1.2 )
Speed of the accelerated movement of the rod, m/s(mm/hour): 6,9х10Е-6(25).
Accuracy of maintenance of the speed of the rod, %: ±2
Rotation frequency of the rod, 1/s (rotations/min):
- the lowest speed: 0,05(3);
- the highest speed: 0,133(8).
Accuracy of stabilization of voltage on the heater, %:
- in the range from 2,5V to 5V, %: ±2;
- in the range from 5V to 7V, %: ±1;
- in the range from 7V to 10V: ±0,1.
Installation requirements
A shop with the following parameters of microclimate: – temperature 20±5°С; – relative humidity below 90%; Also: – a premise of 9m2; – a sewer discharge at the floor level or lower with a conditional pass of at least 70mm; – a contour of grounding, with resistance value between the grounding bolt and any of accessible parts of the device should be 0.1ohm or lower.
Operational supplies
Demineralized water under a pressure of 4х10Е5±0.5х10Е5Pa(Pascal) (4±0,5 kg/cm2).
Water temperature must not be higher than 20±5°С; debit of water should be 3.5 m3/hour;
Nitrogen gas, purified to the level required by GOST 9293-74 and supplied under 0,5х10E5Pa of pressure (0,5kg/cm2). The power supply of the device is realized by three-phase four-wire (with a zero wire) networks of alternating electrical current with a voltage of 380V(Volt), a frequency of 50(60)Hz. Quality standards of electrical current should meet the requirements of GOST 1.3109-87.
You can also visit our picture galleries and videos by following this link.
Omega-M200, a crystal growing furnace: sapphire single crystals of up to 200mm in diameter by Kyropoulos method
Omega-M200
The device is intended for cultivation of sapphire monocrystals weighing up to 38kg, with a diameter of up to 200mm and a length of up to 300mm, by the method GOI (Kyropoulos).
Technical Characteristics
Weight of the load of raw material in the melting pot, kg: 38.
Temperature of molten material, Celsius: 2100.
Hypobaric pressure in the chamber, Pa: 6x10E-5
Run of the rod, mm: 150.
Working speed of the rod, mm/hour: 0,1-1,2
Power consumption, kilowatt: 60, peak- kilowatt: 80.
Cooling water debit, cubic meter/hour: 3,5.
Inert gas debit, cubic meter/cycle: 0,2.
Weight, kg 2108.
Additional Parameters
Method of heating: resistive.
Working environment: vacuum, Pa: 6х10E-5
The speed of the rod (the speed varies in 0,1mm/hour increments), m/s(mm/hour):
- the lowest speed: 0,03х10E-6( 0.1)
- the highest speed: 3,6х10E-6(1.2 )
Speed of the accelerated movement of the rod, m/s(mm/hour): 6,9х10E-6(25)
Accuracy of maintenance of the speed of the rod, %: ±2;
Rotation frequency of the rod , 1/s (rotations/min):
- the lowest speed: 0,05(3);
- the highest speed: 0,133(8).
Accuracy of stabilization of voltage on the heater, %:
- in the range from 2,5V to 5V: ±2;
- in the range from 5V to 7V: ±1%;
- in the range from 7V to 10V: ±0,1%.
Installation requirements
A shop with the following parameters of microclimate:
- temperature 20±5°С;
- relative humidity below 90%;
Also:
- a premise of 9m2;
- a sewer discharge at the floor level or lower with a conditional pass of at least 70mm;
- a contour of grounding, with resistance value between the grounding bolt and any of accessible parts of the device should be 0.1ohm or lower.
Operational supplies:
Demineralized water under a pressure of 4х10E5±0.5х10E5Pa(Pascal) (4±0,5 kg/cm2). Water temperature must not be higher than 20±5°С; debit of water should be 3.5 m3/hour;
Nitrogen gas, purified to the level required by GOST 9293-74 and supplied under 0,5х105Pa of pressure (0,5kg/cm2).
The power supply of the device is realized by three-phase four-wire (with a zero wire) networks of alternating electrical current with a voltage of 380V(Volt), a frequency of 50(60)Hz.
Quality standards of electrical current should meet the requirements of GOST 1.3109-87.
Wafer slicing saws
Pryroda manufactures equipment for wafer slicing of sapphire (Al2O3) and other hard and super-hard mono and poly crystalline materials, notably silicium (Si), corundum and others.
Pryroda’s wafer slicing saw Titan-P uses a diamond coated wire technology.
A combination of electric drive with high-torque electric motors and SIEMENS controlling units allows reaching of slicing speeds of 15 square mm per minute for super-hard materials.
149 wafers of 50.8mm in 2 – 2.5hours
An ingot of 50.8mm in diameter could be sliced in 2 – 2.5 hours producing up to 149 wafers simultaneously.
For watch industry: up to 850 wafers of 50.8mm in 2 – 2.5hours
An additional appliance extends productivity to 850 simultaneously obtained wafers for watch crystals in just 2 – 2.5 hours. Indeed, in wafer slicing intended for use in the watch industry, the exact crystallographic orientation is not required. This simplifies the design and allows higher productivity.
Distinctive quality
The distinctive quality of Titan-P wafer slicing saw designed by Pryroda is a high reliability of the mechanisms despite a high wind speed of the diamond coated wire. This allows avoiding wire breaks during slicing process.
In Pryroda’s design, the cutting force transmitted to the wire is not accumulated on the extremities.
For such design, the only limitation on the number of wafers is the mechanical strength of the sliced ingot. Indeed, in slicing with rotation, the central kernel receives a force load proportional to the length of the ingot.
Titan-P: a wafer slicing wire saw with a diamond coated wire
Highlights
- Astounding productivity and reliability: several dozen times higher output than with other wafer slicing machines available on the market;
- Successfully operated by renowned sapphire manufacturers;
- Comes along with an extensive technological support for implementation;
- Covered for after-sale support and parts;
Description
The device is intended for slicing of poly crystal and single crystal ingots, notably of sapphire monocrystals, as well as for slicing of other hard or superhard materials. Slicing is done by a diamond coated wire.
Technical Characteristics (Main configuration)
Diameter of sliced ingots, mm: up to 300mm
Length of sliced ingots, mm: up to 150
Weight of sliced ingots, maximum, kg: 11.5
Wire winding speed, m/s: 0.3 – 15
Transversal approach speed,
mm/min.: 0.07 – 1
Number of wafers from one cycle of cutting (thickness of 0.7mm), pieces: 149
Duration of one cycle with a sapphire ingot of 50.8mm in diameter and 150mm in length (resulting in 149 wafers), hours: 2 – 2.5
WARP, micro meters: 10 – 30
Ra, micro meters: 0.7 – 0.8
Weight of the device, kg: 1310
Watch industry configuration:
One cycle of slicing allows to obtain up to 850 wafers* of 50.8mm in diameter and 0.7mm thick in 2 – 2.5 hours.
*for use in the watch making industry
Installation requirements
A shop with the following parameters:
- temperature 18 – 30°С;
- relative humidity below 70%;
- there is now need for a special bedding;
Also:
- a premise of 9m2;
- a contour of grounding, with resistance value between the grounding bolt and any of accessible parts of the device should be 0.1ohm or lower.
Operational supplies:
Compressed air, purified to the level of at least 12, in accordance with GOST17433 and supplied under 6.3х10E5Pa of pressure (6.42kg/cm2).
The power supply of the device is realized by three-phase four-wire (with a zero wire) networks of alternating electrical current with a voltage of 380V(Volt), a frequency of 50(60)Hz.
Quality standards of electrical current should meet the requirements of GOST 1.3109-87.
You can also visit our picture galleries and videos by following this link.
850 wafers in 2 – 2.5 hours
Titan-P for slicing wafers for watch industry
An additional appliance extends productivity of Titan-P to 850 simultaneously obtained wafers for watch industry in just 2 – 2.5 hours.
Indeed, in wafer slicing intended for use in the watch industry, the exact crystallographic orientation is not required. This allows a simplified design of wafer slicing saw. Pryroda can tailor Titan-P wafer slicing saw for particular needs of a customer.
Other wafer slicing equipment
“AGAT”: wafer slicing of silicon ingots for ingots measuring up to 200mm in diameter and up to 500mm in length.
“AGAT” can be modified for slicing of sapphire ingots.
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For detailed information about our equipment, please contact us directly . Our contact details are on the “Contact” page of this site.
Spectrum-P, sapphire crystal growing furnace: ribbon-shaped 1200mm long sapphire single crystals by EFG/Stepanov method
Spectrum-P
Ribbon-shaped sapphire single crystals of up to 1200mm by EFG/Stepanov method.
The device is intended for cultivation of sapphire monocrystals by the method of Stepanov/EFG (Edge-Defined Film-Fed Growth (EFG).
Highlights
Possibility to add furnace-charge during the process.
Sensors for precision control of the growth regimes.
Technical Characteristics
Dimensions of obtained ingots:
width, max, mm: 85,
length, max, mm: 1200.
Temperature of molten material, Celsius: 2150.
Number of working rods: 2.
Run of the rod, mm: 1200.
Working speed of the rod:
growth regime, mm/min: 0.2-2,
adjustment regime, mm/min: up to 4,
accelerated regime, mm/min: 685.
Speed of the rod variation increment, mm/min: 0.05
Power consumption, kilowatt: 65.
Dimensions of crystallizer:
length, mm: 2396,
width, mm: 1150,
height, mm: 4500.
Weight, kg 4767.
The power supply of the device is realized by three-phase four-wire (with a zero wire) networks of alternating electrical current with a voltage of 380V(Volt), a frequency of 50(60)Hz.
A contour of grounding, with resistance value between the grounding bolt and any of accessible parts of the device should be 0.1ohm or lower.
Quality standards of electrical current should meet the requirements of GOST 1.3109-87.