Range of technology support: deployment of turn-key sapphire manufacturing based on Kyropoulos method

Sapphire single crystal obtained in our sapphire grower.

- Tool design and manufacturing for processing and optical orientation measuring
- Diamond tool selection
- Development of complex sapphire manufacturing techniques
- Personnel training

- Customized control system and software design
- Technical assistance and upgrades
- Remote control and support through Internet

Omega-M300, a Kyropoulos sapphire growing furnace

The sapphire grower is intended for cultivation of sapphire monocrystals weighing up to 85kg, with a diameter of up to 300mm (11.8″) and a length of up to 300mm, by the method GOI (Kyropoulos).

Technical Characteristics

Weight of the load of raw material in the melting pot, kg: 85.
Temperature of molten material, Celsius: 2100
Hypobaric pressure in the chamber, Pa: 6×10Е-5
Run of the rod, mm: 150
Working speed of the rod, mm/hour: 0,1-1,2
Power consumption, kilowatt: 45 - 85, peak- kilowatt: 120
Cooling water debit, cubic meter/hour: 3,5
Inert gas debit, cubic meter/cycle: 0,3
Weight, kg 2205

Additional Parameters

Method of heating: resistive.
Working environment: vacuum, Pa: 6х10Е-5
The speed of the rod (the speed varies in 0,1mm/hour increments), m/s(mm/hour):
- the lowest speed: 0,03х10Е-6( 0.1)
- the highest speed: 3,6х10Е-6(1.2 )
Speed of the accelerated movement of the rod, m/s(mm/hour): 6,9х10Е-6(25).

The power unit of Omega-M300 delivers from 60 to 100kW of electric power during the growing process.

Accuracy of maintenance of the speed of the rod, %: ±2
Rotation frequency of the rod, 1/s (rotations/min):
- the lowest speed: 0,05(3);
- the highest speed: 0,133(8).
Accuracy of stabilization of voltage on the heater, %:
- in the range from 2,5V to 5V, %: ±2;
- in the range from 5V to 7V, %: ±1;
- in the range from 7V to 10V: ±0,1.

Installation requirements

Use of a load cell in combination with controlling software improves outputs while reducing the role of the operator.

A shop with the following parameters of microclimate: - temperature 20±5°С; - relative humidity below 90%; Also: - a premise of 9m2; - a sewer discharge at the floor level or lower with a conditional pass of at least 70mm; - a contour of grounding, with resistance value between the grounding bolt and any of accessible parts of the device should be 0.1ohm or lower.

Operational supplies

Demineralized water under a pressure of 4х10Е5±0.5х10Е5Pa(Pascal) (4±0,5 kg/cm2).
Water temperature must not be higher than 20±5°С; debit of water should be 3.5 m3/hour;

A closed circuit cooling system reduces water consumption.

Nitrogen gas, purified to the level required by GOST 9293-74 and supplied under 0,5х10E5Pa of pressure (0,5kg/cm2). The power supply of the device is realized by three-phase four-wire (with a zero wire) networks of alternating electrical current with a voltage of 380V(Volt), a frequency of 50(60)Hz. Quality standards of electrical current should meet the requirements of GOST 1.3109-87.

You can also visit our picture galleries and videos by following this link.

The rod with the load cell

Omega-M200

The device is intended for cultivation of sapphire monocrystals weighing up to 38kg, with a diameter of up to 200mm and a length of up to 300mm, by the method GOI (Kyropoulos).

Technical Characteristics

Weight of the load of raw material in the melting pot, kg: 38.
Temperature of molten material, Celsius: 2100.
Hypobaric pressure in the chamber, Pa: 6×10E-5
Run of the rod, mm: 150.
Working speed of the rod, mm/hour: 0,1-1,2
Power consumption, kilowatt: 60, peak- kilowatt: 80.
Cooling water debit, cubic meter/hour: 3,5.
Inert gas debit, cubic meter/cycle: 0,2.
Weight, kg 2108.

The column with the rod lifting mechanism

Additional Parameters
Method of heating: resistive.
Working environment: vacuum, Pa: 6х10E-5
The speed of the rod (the speed varies in 0,1mm/hour increments), m/s(mm/hour):
- the lowest speed: 0,03х10E-6( 0.1)
- the highest speed: 3,6х10E-6(1.2 )
Speed of the accelerated movement of the rod, m/s(mm/hour): 6,9х10E-6(25)
Accuracy of maintenance of the speed of the rod, %: ±2;
Rotation frequency of the rod , 1/s (rotations/min):
- the lowest speed: 0,05(3);
- the highest speed: 0,133(8).

A closer look at the load cell

Accuracy of stabilization of voltage on the heater, %:
- in the range from 2,5V to 5V: ±2;
- in the range from 5V to 7V: ±1%;
- in the range from 7V to 10V: ±0,1%.

Installation requirements

A shop with the following parameters of microclimate:
- temperature 20±5°С;
- relative humidity below 90%;
Also:
- a premise of 9m2;
- a sewer discharge at the floor level or lower with a conditional pass of at least 70mm;
- a contour of grounding, with resistance value between the grounding bolt and any of accessible parts of the device should be 0.1ohm or lower.

Inside the power supply unit of the sapphire crystal grower

Operational supplies:

Demineralized water under a pressure of 4х10E5±0.5х10E5Pa(Pascal) (4±0,5 kg/cm2). Water temperature must not be higher than 20±5°С; debit of water should be 3.5 m3/hour;
Nitrogen gas, purified to the level required by GOST 9293-74 and supplied under 0,5х105Pa of pressure (0,5kg/cm2).
The power supply of the device is realized by three-phase four-wire (with a zero wire) networks of alternating electrical current with a voltage of 380V(Volt), a frequency of 50(60)Hz.
Quality standards of electrical current should meet the requirements of GOST 1.3109-87.

Pryroda’s wafer slicing saw Titan-P uses a diamond coated wire technology.

A combination of electric drive with high-torque electric motors and SIEMENS controlling units allows reaching of slicing speeds of 15 square mm per minute for super-hard materials.

149 wafers of 50.8mm in 2 - 2.5hours

An ingot of 50.8mm in diameter could be sliced in 2 – 2.5 hours producing up to 149 wafers simultaneously.

For watch industry: up to 850 wafers of 50.8mm in 2 - 2.5hours

An additional appliance extends productivity to 850 simultaneously obtained wafers for watch crystals in just 2 – 2.5 hours. Indeed, in wafer slicing intended for use in the watch industry, the exact crystallographic orientation is not required. This simplifies the design and allows higher productivity.

Distinctive quality

The distinctive quality of Titan-P wafer slicing saw designed by Pryroda is a high reliability of the mechanisms despite a high wind speed of the diamond coated wire. This allows avoiding wire breaks during slicing process.

In Pryroda’s design, the cutting force transmitted to the wire is not accumulated on the extremities.

For such design, the only limitation on the number of wafers is the mechanical strength of the sliced ingot. Indeed, in slicing with rotation, the central kernel receives a force load proportional to the length of the ingot.

]]> http://pryroda.biz/wafer-slicing-saws/feed/ http://pryroda.biz/titan-p-a-wafer-slicing-wire-saw-with-a-diamond-coated-wire/ http://pryroda.biz/titan-p-a-wafer-slicing-wire-saw-with-a-diamond-coated-wire/#comments Sun, 23 Dec 2007 22:40:51 +0000 admin http://pryroda.biz/blogEN/?p=31 Highlights

Titan-P: the wafer slicing saw and its controlling unit. Equipped with SIEMENS modules and components.

• Astounding productivity and reliability: several dozen times higher output than with other wafer slicing machines available on the market;
• Successfully operated by renowned sapphire manufacturers;
• Comes along with an extensive technological support for implementation;
• Covered for after-sale support and parts;

Titan-P: A view on the working area with the ingot rotating mechanism and the drums with tight wire.

Description

The device is intended for slicing of poly crystal and single crystal ingots, notably of sapphire monocrystals, as well as for slicing of other hard or superhard materials. Slicing is done by a diamond coated wire.

Technical Characteristics (Main configuration)

Diameter of sliced ingots, mm: up to 300mm

Length of sliced ingots, mm: up to 150

Weight of sliced ingots, maximum, kg: 11.5

Wire winding speed, m/s: 0.3 - 15

Transversal approach speed,

mm/min.: 0.07 - 1

Number of wafers from one cycle of cutting (thickness of 0.7mm), pieces: 149

Cutting of a large diameter sapphire ingot (about 11 inches) into wafers.

Duration of one cycle with a sapphire ingot of 50.8mm in diameter and 150mm in length (resulting in 149 wafers), hours: 2 - 2.5

WARP, micro meters: 10 - 30

Ra, micro meters: 0.7 - 0.8

Weight of the device, kg: 1310

Watch industry configuration:

One cycle of slicing allows to obtain up to 850 wafers* of 50.8mm in diameter and 0.7mm thick in 2 - 2.5 hours.

*for use in the watch making industry

Titan-P: a view on the cooling-lubricating fluid unit.

Installation requirements

A shop with the following parameters:

- temperature 18 - 30°С;

- relative humidity below 70%;

- there is now need for a special bedding;

Also:

- a premise of 9m2;

- a contour of grounding, with resistance value between the grounding bolt and any of accessible parts of the device should be 0.1ohm or lower.

Operational supplies:

Slicing of a 200mm (7.8'') sapphire ingot into wafers.

Compressed air, purified to the level of at least 12, in accordance with GOST17433 and supplied under 6.3х10E5Pa of pressure (6.42kg/cm2).

The power supply of the device is realized by three-phase four-wire (with a zero wire) networks of alternating electrical current with a voltage of 380V(Volt), a frequency of 50(60)Hz.

Quality standards of electrical current should meet the requirements of GOST 1.3109-87.

You can also visit our picture galleries and videos by following this link.

Titan-P_photo2

Titan-P for slicing wafers for watch industry

An additional appliance extends productivity of Titan-P to 850 simultaneously obtained wafers for watch industry in just 2 – 2.5 hours.

Indeed, in wafer slicing intended for use in the watch industry, the exact crystallographic orientation is not required. This allows a simplified design of wafer slicing saw. Pryroda can tailor Titan-P wafer slicing saw for particular needs of a customer.

Could be notably mentioned:

“SDSH-150”: double-sided wafer polishing with free abrasive. At one time, works 6 wafers of 150mm in diameter or 90 wafers of 40mm.
The control system provides specific pressure according to the selected work program.

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For detailed information about our equipment, please contact us directly . Our contact details are on the “Contact” page of this site.

]]> http://pryroda.biz/other-equipment/feed/ http://pryroda.biz/other-wafer-slicing-equipment/ http://pryroda.biz/other-wafer-slicing-equipment/#comments Sun, 23 Dec 2007 18:32:05 +0000 admin http://pryroda.biz/blogEN/?p=28

“AGAT”: wafer slicing of silicon ingots for ingots measuring up to 200mm in diameter and up to 500mm in length.
“AGAT” can be modified for slicing of sapphire ingots.

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For detailed information about our equipment, please contact us directly . Our contact details are on the “Contact” page of this site.

]]> http://pryroda.biz/other-wafer-slicing-equipment/feed/ http://pryroda.biz/other-crystal-growing-furnaces/ http://pryroda.biz/other-crystal-growing-furnaces/#comments Sun, 23 Dec 2007 17:57:25 +0000 admin http://pryroda.biz/blogEN/?p=27 Pryroda’s offering of crystal growing furnaces includes furnaces that use crystal growing methods of Kyropoulos, Czochralski, Verneuil.

Notably:

“KORUNDUM” (Verneuil method): simultaneous cultivation of 90 sapphire (Al2O3) single crystals measuring 20mm in diameter and 50mm long.

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“CRYSTAL” (Czochralski method): crystals of alumina-yttrium aluminum garnet (YAG), Lithium niobate (LiNbO3).

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“DEYMOS” (Czochralski method): silicon monocrystals of up to 203mm in diameter. Loading weight is up to 100kg.

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For detailed information about our equipment, please contact us directly . Our contact details are on the “Contact” page of this site.

Lutch_photo4

Highlights

• compact;
• effective screening of the growth zone;
• high precision in regulation of gases debit;
• wide range of crystal growth speeds;
• ease of maintenance and servicing;

Technical Characteristics
Hydrogen and oxygen pressure, kg/cm2: 3.2 - 6
Hydrogen debit, maximum, liter/min: 50
Oxygen debit, maximum, liter/min: 32
Power consumption, kilowatt: 0.4
Furnace Dimensions:
Length, mm: 900
Width, mm: 1100
Height, mm: 2700
Weight, kg: 700