Omega-M300, a crystal growing furnace: sapphire ingots of 300mm (11.8″) in diameter and weighing up to 85kg by Kyropoulos method
Omega-M300
The sapphire grower is intended for cultivation of sapphire monocrystals weighing up to 85kg, with a diameter of up to 300mm (11.8″) and a length of up to 300mm, by the method GOI (Kyropoulos).
Technical Characteristics
Weight of the load of raw material in the melting pot, kg: 85.
Temperature of molten material, Celsius: 2100
Hypobaric pressure in the chamber, Pa: 6×10?-5
Run of the rod, mm: 150
Working speed of the rod, mm/hour: 0,1-1,2
Power consumption, kilowatt: 45 – 85, peak- kilowatt: 120
Cooling water debit, cubic meter/hour: 3,5
Inert gas debit, cubic meter/cycle: 0,3
Weight, kg 2205
Additional Parameters
Method of heating: resistive.
Working environment: vacuum, Pa: 6?10?-5
The speed of the rod (the speed varies in 0,1mm/hour increments), m/s(mm/hour):
– the lowest speed: 0,03?10?-6( 0.1)
– the highest speed: 3,6?10?-6(1.2 )
Speed of the accelerated movement of the rod, m/s(mm/hour): 6,9?10?-6(25).
Accuracy of maintenance of the speed of the rod, %: ±2
Rotation frequency of the rod, 1/s (rotations/min):
– the lowest speed: 0,05(3);
– the highest speed: 0,133(8).
Accuracy of stabilization of voltage on the heater, %:
– in the range from 2,5V to 5V, %: ±2;
– in the range from 5V to 7V, %: ±1;
– in the range from 7V to 10V: ±0,1.
Installation requirements
A shop with the following parameters of microclimate: – temperature 20±5°?; – relative humidity below 90%; Also: – a premise of 9m2; – a sewer discharge at the floor level or lower with a conditional pass of at least 70mm; – a contour of grounding, with resistance value between the grounding bolt and any of accessible parts of the device should be 0.1ohm or lower.
Operational supplies
Demineralized water under a pressure of 4?10?5±0.5?10?5Pa(Pascal) (4±0,5 kg/cm2).
Water temperature must not be higher than 20±5°?; debit of water should be 3.5 m3/hour;
Nitrogen gas, purified to the level required by GOST 9293-74 and supplied under 0,5?10E5Pa of pressure (0,5kg/cm2). The power supply of the device is realized by three-phase four-wire (with a zero wire) networks of alternating electrical current with a voltage of 380V(Volt), a frequency of 50(60)Hz. Quality standards of electrical current should meet the requirements of GOST 1.3109-87.
Omega-M200, a crystal growing furnace: sapphire single crystals of up to 200mm in diameter by Kyropoulos method
Omega-M200
The device is intended for cultivation of sapphire monocrystals weighing up to 38kg, with a diameter of up to 200mm and a length of up to 300mm, by the method GOI (Kyropoulos).
Technical Characteristics
Weight of the load of raw material in the melting pot, kg: 38.
Temperature of molten material, Celsius: 2100.
Hypobaric pressure in the chamber, Pa: 6x10E-5
Run of the rod, mm: 150.
Working speed of the rod, mm/hour: 0,1-1,2
Power consumption, kilowatt: 60, peak- kilowatt: 80.
Cooling water debit, cubic meter/hour: 3,5.
Inert gas debit, cubic meter/cycle: 0,2.
Weight, kg 2108.
Additional Parameters
Method of heating: resistive.
Working environment: vacuum, Pa: 6?10E-5
The speed of the rod (the speed varies in 0,1mm/hour increments), m/s(mm/hour):
– the lowest speed: 0,03?10E-6( 0.1)
– the highest speed: 3,6?10E-6(1.2 )
Speed of the accelerated movement of the rod, m/s(mm/hour): 6,9?10E-6(25)
Accuracy of maintenance of the speed of the rod, %: ±2;
Rotation frequency of the rod , 1/s (rotations/min):
– the lowest speed: 0,05(3);
– the highest speed: 0,133(8).
Accuracy of stabilization of voltage on the heater, %:
– in the range from 2,5V to 5V: ±2;
– in the range from 5V to 7V: ±1%;
– in the range from 7V to 10V: ±0,1%.
Installation requirements
A shop with the following parameters of microclimate:
– temperature 20±5°?;
– relative humidity below 90%;
Also:
– a premise of 9m2;
– a sewer discharge at the floor level or lower with a conditional pass of at least 70mm;
– a contour of grounding, with resistance value between the grounding bolt and any of accessible parts of the device should be 0.1ohm or lower.
Operational supplies:
Demineralized water under a pressure of 4?10E5±0.5?10E5Pa(Pascal) (4±0,5 kg/cm2). Water temperature must not be higher than 20±5°?; debit of water should be 3.5 m3/hour;
Nitrogen gas, purified to the level required by GOST 9293-74 and supplied under 0,5?105Pa of pressure (0,5kg/cm2).
The power supply of the device is realized by three-phase four-wire (with a zero wire) networks of alternating electrical current with a voltage of 380V(Volt), a frequency of 50(60)Hz.
Quality standards of electrical current should meet the requirements of GOST 1.3109-87.
Other crystal growing furnaces
Pryroda’s offering of crystal growing furnaces includes furnaces that use crystal growing methods of Kyropoulos, Czochralski, Verneuil.
Notably:
“KORUNDUM” (Verneuil method): simultaneous cultivation of 90 sapphire (Al2O3) single crystals measuring 20mm in diameter and 50mm long.
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“CRYSTAL” (Czochralski method): crystals of alumina-yttrium aluminum garnet (YAG), Lithium niobate (LiNbO3).
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“DEYMOS” (Czochralski method): silicon monocrystals of up to 203mm in diameter. Loading weight is up to 100kg.
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For detailed information about our equipment, please contact us directly . Our contact details are on the “Contact” page of this site.
Crystal Growing Furnaces
«Omega» family of crystal growing furnaces includes furnaces from Omega-M to Omega-M300, with obtained ingots sizes of sapphire single crystals ranging form 150mm in diameter and weighing 14kg to ingots of 300mm in diameter and weighing up to 85kg.
A clever design of crystal weight measurement module allows an automatic control of parameters of crystal growing process. Indeed, a weight sensor used in the weight measurement module combined with a sophisticated controlling software drastically reduce the role of the operator.
Spectrum-P, sapphire crystal growing furnace: ribbon-shaped 1200mm long sapphire single crystals by EFG/Stepanov method
Spectrum-P
Ribbon-shaped sapphire single crystals of up to 1200mm by EFG/Stepanov method.
The device is intended for cultivation of sapphire monocrystals by the method of Stepanov/EFG (Edge-Defined Film-Fed Growth (EFG).
Highlights
Possibility to add furnace-charge during the process.
Sensors for precision control of the growth regimes.
Technical Characteristics
Dimensions of obtained ingots:
width, max, mm: 85,
length, max, mm: 1200.
Temperature of molten material, Celsius: 2150.
Number of working rods: 2.
Run of the rod, mm: 1200.
Working speed of the rod:
growth regime, mm/min: 0.2-2,
adjustment regime, mm/min: up to 4,
accelerated regime, mm/min: 685.
Speed of the rod variation increment, mm/min: 0.05
Power consumption, kilowatt: 65.
Dimensions of crystallizer:
length, mm: 2396,
width, mm: 1150,
height, mm: 4500.
Weight, kg 4767.
The power supply of the device is realized by three-phase four-wire (with a zero wire) networks of alternating electrical current with a voltage of 380V(Volt), a frequency of 50(60)Hz.
A contour of grounding, with resistance value between the grounding bolt and any of accessible parts of the device should be 0.1ohm or lower.
Quality standards of electrical current should meet the requirements of GOST 1.3109-87.